دیتاشیت PHT8N06LT,135
مشخصات دیتاشیت
| نام دیتاشیت |
PHT8N06LT
|
| حجم فایل |
170.869
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
55V
-
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
5V
-
Rds On (Max) @ Id, Vgs:
80mOhm @ 5A, 5V
-
Vgs(th) (Max) @ Id:
2V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
11.2nC @ 5V
-
Vgs (Max):
±13V
-
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
1.8W (Ta), 8.3W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
SOT-223
-
Package / Case:
TO-261-4, TO-261AA
-
Base Part Number:
PHT8
-
detail:
N-Channel 55V 3.5A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
